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NGTB15N120IHLWG Tech Specifications

NGTB15N120IHLWG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 24 Weeks
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Max Power Dissipation 156W
Number of Elements 1
Power Dissipation 250W
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Max Collector Current 30A
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 15A, 15 Ω, 15V
Turn Off Time-Nom (toff) 440 ns
Current - Collector Pulsed (Icm) 120A
Switching Energy 560μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Length 16.26mm
Radiation Hardening No
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2012
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Pin Count 3
Element Configuration Single
Case Connection COLLECTOR
Power - Max 156W
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 1.2kV
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 1.8V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 15A
Gate Charge 160nC
Td (on/off) @ 25°C -/165ns
Gate-Emitter Voltage-Max 20V
Height 21.08mm
Width 5.3mm
REACH SVHC No SVHC
Lead Free Lead Free
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