NGTB15N120IHWG Tech Specifications

NGTB15N120IHWG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 29 Weeks
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Max Power Dissipation 278W
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Power - Max 278W
Polarity/Channel Type N-CHANNEL
Max Collector Current 30A
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 15A, 10 Ω, 15V
Turn Off Time-Nom (toff) 385 ns
Gate Charge 120nC
Td (on/off) @ 25°C -/130ns
Height 21.4mm
Width 5.3mm
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Published 2004
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Elements 1
Input Type Standard
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 2.45V
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 2.1V
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 15A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 60A
Switching Energy 360μJ (off)
Length 16.25mm
REACH SVHC No SVHC
Lead Free Lead Free
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