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NSS30201MR6T1G Tech Specifications

NSS30201MR6T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Terminal Finish Tin (Sn)
Voltage - Rated DC 30V
Terminal Position DUAL
Current Rating 2A
Base Part Number NSS30201
Number of Elements 1
Power Dissipation 1.18W
Halogen Free Halogen Free
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 30V
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 500mA 5V
Vce Saturation (Max) @ Ib, Ic 75mV @ 1mA, 100mA
Transition Frequency 300MHz
Max Breakdown Voltage 30V
Emitter Base Voltage (VEBO) 5V
Height 1mm
Width 1.7mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Package / Case SOT-23-6
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 535mW
Terminal Form GULL WING
Frequency 300MHz
Pin Count 6
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Transistor Type NPN
Max Collector Current 2A
Current - Collector Cutoff (Max) 100nA
Collector Emitter Breakdown Voltage 30V
Collector Emitter Saturation Voltage 60mV
Collector Base Voltage (VCBO) 50V
hFE Min 300
Length 3.1mm
Radiation Hardening No
Lead Free Lead Free
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NSS30201MR6T1G Documents

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