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NTGD3148NT1G Tech Specifications

MOSFET 2N-CH 20V 3A 6TSOP

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 15 Weeks
Mount Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Terminal Finish Tin (Sn)
Max Power Dissipation 900mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Base Part Number NTGD3148N
Qualification Status Not Qualified
Element Configuration Dual
Power Dissipation 1.1W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 3.8nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Turn-Off Delay Time 12.8 ns
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.07Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Number of Pins 6
Operating Temperature -50°C~150°C TJ
Published 2008
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 6
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 70m Ω @ 3.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 10V
Rise Time 11.2ns
Fall Time (Typ) 1.6 ns
Continuous Drain Current (ID) 3A
Drain Current-Max (Abs) (ID) 3A
Drain to Source Breakdown Voltage 20V
FET Feature Logic Level Gate
Lead Free Lead Free
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