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NTGD3149CT1G Tech Specifications

MOSFET N/P-CH 20V 6-TSOP

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 5 days ago)
Mounting Type Surface Mount
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2008
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 900mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 6
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 60m Ω @ 3.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 387pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 4.5V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Turn-Off Delay Time 33.3 ns
Gate to Source Voltage (Vgs) 8V
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 6
Terminal Finish Tin (Sn)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Element Configuration Dual
Power Dissipation 900mW
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.2A 2.4A
Rise Time 5.3ns
Fall Time (Typ) 29.5 ns
Continuous Drain Current (ID) 3.5A
Drain to Source Breakdown Voltage 20V
FET Feature Logic Level Gate
Lead Free Lead Free
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