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NTHS5404T1G Tech Specifications

NTHS5404T1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mount Surface Mount
Package / Case 8-SMD, Flat Lead
Weight 4.535924g
Operating Temperature -55°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form C BEND
Current Rating 5.2A
Pin Count 8
Power Dissipation-Max 1.3W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 8 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 600mV @ 250μA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Fall Time (Typ) 7 ns
Continuous Drain Current (ID) 7.2A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Input Capacitance 740pF
Length 3.1mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 17 hours ago)
Mounting Type Surface Mount
Number of Pins 8
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 8
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 20V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Number of Elements 1
Element Configuration Single
Power Dissipation 1.3W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 30m Ω @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C 5.2A Ta
Rise Time 7ns
Vgs (Max) ±12V
Turn-Off Delay Time 50 ns
Threshold Voltage 600mV
Drain-source On Resistance-Max 0.03Ohm
Dual Supply Voltage 20V
Height 1.1mm
Width 1.7mm
REACH SVHC No SVHC
Lead Free Lead Free
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