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NTHS5441T1G Tech Specifications

MOSFET P-CH 20V 3.9A CHIPFET

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 8
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 8
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC -20V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Number of Elements 1
Element Configuration Single
Power Dissipation 1.3W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 46m Ω @ 3.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 5V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±12V
Turn-Off Delay Time 42 ns
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Height 1.1mm
Width 1.7mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 10 hours ago)
Mount Surface Mount
Package / Case 8-SMD, Flat Lead
Weight 4.535924g
Operating Temperature -55°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Form C BEND
Current Rating -3.9A
Pin Count 8
Power Dissipation-Max 1.3W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 14 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.9A Ta
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Fall Time (Typ) 22 ns
Continuous Drain Current (ID) 5.3A
Drain-source On Resistance-Max 0.06Ohm
Nominal Vgs -1.2 V
Length 3.1mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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