NTR5103NT1G Tech Specifications

NTR5103NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2014
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300mW Ta
Power Dissipation 300mW
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.5 Ω @ 240mA, 10V
Input Capacitance (Ciss) (Max) @ Vds 40pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 0.81nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 3.6 ns
Continuous Drain Current (ID) 260mA
Drain Current-Max (Abs) (ID) 0.26A
Max Junction Temperature (Tj) 150°C
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Subcategory FET General Purpose Power
Terminal Position DUAL
Number of Elements 1
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 1.7 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.6V @ 250μA
Current - Continuous Drain (Id) @ 25°C 260mA Ta
Rise Time 1.2ns
Vgs (Max) ±30V
Turn-Off Delay Time 4.8 ns
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 60V
Height 1.11mm
Lead Free Lead Free
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NTR5103NT1G Documents

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