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NTR5198NLT1G Tech Specifications

NTR5198NLT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Contact Plating Tin
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Subcategory FET General Purpose Power
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Number of Elements 1
Power Dissipation-Max 900mW Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 5 ns
Rds On (Max) @ Id, Vgs 155m Ω @ 1A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 1.7A Ta
Rise Time 7ns
Vgs (Max) ±20V
Turn-Off Delay Time 13 ns
Threshold Voltage 2.5V
Drain-source On Resistance-Max 0.205Ohm
Height 1.01mm
Width 1.4mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Surface Mount YES
Weight 1.437803g
Operating Temperature -55°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 3
Number of Channels 1
Element Configuration Single
Power Dissipation 1.5W
FET Type N-Channel
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 182pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 2 ns
Continuous Drain Current (ID) 2.2A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Length 3.04mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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