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NTZD3156CT5G Tech Specifications

MOSFET N/P-CH 20V SOT-563

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 5 days ago)
Mounting Type Surface Mount
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2008
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 250mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 6
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 550m Ω @ 540mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 72pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 4.5V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Turn-Off Delay Time 29 ns
Gate to Source Voltage (Vgs) 6V
Drain-source On Resistance-Max 0.55Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case SOT-563, SOT-666
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 6
Subcategory Other Transistors
Terminal Form FLAT
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Element Configuration Dual
Power Dissipation 280mW
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 540mA 430mA
Rise Time 6.5ns
Fall Time (Typ) 6.5 ns
Continuous Drain Current (ID) 540mA
Drain Current-Max (Abs) (ID) 0.54A
Drain to Source Breakdown Voltage 20V
FET Feature Logic Level Gate
Lead Free Lead Free
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