NTZD5110NT1G Tech Specifications

NTZD5110NT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Contact Plating Tin
Package / Case SOT-563, SOT-666
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2007
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Form FLAT
[email protected] Reflow Temperature-Max (s) 40
Pin Count 6
Element Configuration Dual
Power Dissipation 250mW
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 1.6 Ω @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds 24.5pF @ 20V
Rise Time 7.3ns
Fall Time (Typ) 7.3 ns
Continuous Drain Current (ID) 294mA
Drain to Source Breakdown Voltage 60V
FET Feature Logic Level Gate
Length 1.7mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Resistance 1.6Ohm
Max Power Dissipation 900mW
Peak Reflow Temperature (Cel) 260
Base Part Number NTZD5110N
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 12 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 0.7nC @ 4.5V
Drain to Source Voltage (Vdss) 60V
Turn-Off Delay Time 63.7 ns
Gate to Source Voltage (Vgs) 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Height 600μm
Width 1.3mm
RoHS Status ROHS3 Compliant
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NTZD5110NT1G Documents

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