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NTZD5110NT5G Tech Specifications

MOSFET 2N-CH 60V 0.294A SOT563

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Package / Case SOT-563, SOT-666
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2007
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Form FLAT
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 6
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 1.6 Ω @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds 24.5pF @ 20V
Rise Time 7.3ns
Fall Time (Typ) 7.3 ns
Continuous Drain Current (ID) 294mA
Drain Current-Max (Abs) (ID) 0.294A
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 6
Terminal Finish Tin (Sn)
Max Power Dissipation 250mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Base Part Number NTZD5110N
Qualification Status Not Qualified
Element Configuration Dual
Power Dissipation 250mW
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 0.7nC @ 4.5V
Drain to Source Voltage (Vdss) 60V
Turn-Off Delay Time 63.7 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
FET Feature Logic Level Gate
Lead Free Lead Free
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NTZD5110NT5G Documents

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