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SMMBTA42LT1G Tech Specifications

SMMBTA42LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 7 Weeks
Contact Plating Tin
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 300mW
Terminal Form GULL WING
Base Part Number MMBTA42
Number of Elements 1
Power Dissipation 300mW
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 300V
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA 10V
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Current - Collector (Ic) (Max) 500mA
Collector Base Voltage (VCBO) 300V
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Subcategory Other Transistors
Terminal Position DUAL
Frequency 50MHz
Pin Count 3
Element Configuration Single
Power - Max 225mW
Transistor Type NPN
Max Collector Current 500mA
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 300V
Transition Frequency 50MHz
Emitter Base Voltage (VEBO) 6V
RoHS Status ROHS3 Compliant
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SMMBTA42LT1G Documents

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