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DTD113ZCHZGT116 Tech Specifications

500MA/50V DIGITAL TRANSISTOR (WI

Product Attribute Attribute Value
Category Discrete Semiconductors / Pre-Biased BJT Transistors
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Published 2016
Part Status Active
Number of Terminations 3
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 10
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PDSO-G3
Configuration SINGLE WITH BUILT-IN RESISTOR
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Transition Frequency 200MHz
Resistor - Base (R1) 1 k Ω
Collector-Emitter Voltage-Max 50V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Packaging Cut Tape (CT)
Series Automotive, AEC-Q101
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power - Max 200mW
Polarity/Channel Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 50mA 5V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 200MHz
Resistor - Emitter Base (R2) 10 k Ω
RoHS Status ROHS3 Compliant
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DTD113ZCHZGT116 Documents

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