IPB45P03P4L11ATMA1 Tech Specifications

Trans MOSFET P-CH 30V 45A 3-Pin(2+Tab) TO-263

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2008
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Power Dissipation 58W
Turn On Delay Time 7 ns
Rds On (Max) @ Id, Vgs 10.8m Ω @ 45A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 45A Tc
Rise Time 3ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 14 ns
Continuous Drain Current (ID) -45A
Max Dual Supply Voltage -30V
Drain to Source Breakdown Voltage -30V
Avalanche Energy Rating (Eas) 110 mJ
Length 10mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, OptiMOS™
Part Status Not For New Designs
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 58W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Vgs(th) (Max) @ Id 2V @ 85μA
Input Capacitance (Ciss) (Max) @ Vds 3770pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) +5V, -16V
Turn-Off Delay Time 45 ns
Gate to Source Voltage (Vgs) 5V
Drain-source On Resistance-Max 0.0111Ohm
Pulsed Drain Current-Max (IDM) 180A
Height 4.4mm
Width 9.25mm
Lead Free Contains Lead
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