IPI50R250CPXKSA1 Tech Specifications

Trans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-262

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mounting Type Through Hole
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™
Part Status Obsolete
Number of Terminations 3
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Number of Elements 1
Power Dissipation-Max 114W Tc
Power Dissipation 114W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 250m Ω @ 7.8A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 13A Tc
Rise Time 14ns
Vgs (Max) ±20V
Turn-Off Delay Time 80 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.25Ohm
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Operating Temperature -55°C~150°C TJ
Published 2008
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 35 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 520μA
Input Capacitance (Ciss) (Max) @ Vds 1420pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 11 ns
Continuous Drain Current (ID) 13A
Max Dual Supply Voltage 500V
Avalanche Energy Rating (Eas) 345 mJ
Lead Free Lead Free
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