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MMBT2222ALT3G Tech Specifications

MMBT2222ALT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Contact Plating Tin
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Max Power Dissipation 225mW
Frequency 300MHz
Number of Elements 1
Element Configuration Single
Power - Max 300mW
Transistor Type NPN
Max Collector Current 600mA
Current - Collector Cutoff (Max) 10nA ICBO
Collector Emitter Breakdown Voltage 40V
Current - Collector (Ic) (Max) 600mA
Collector Emitter Saturation Voltage 1V
Frequency - Transition 300MHz
Emitter Base Voltage (VEBO) 6V
Height 1.01mm
Width 1.4mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Part Status Active
Max Operating Temperature 150°C
Voltage - Rated DC 40V
Current Rating 600mA
Base Part Number MMBT2222A
Polarity NPN
Power Dissipation 300mW
Gain Bandwidth Product 300MHz
Collector Emitter Voltage (VCEO) 40V
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 40V
Max Frequency 100MHz
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 75V
hFE Min 35
Length 3.04mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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MMBT2222ALT3G Documents

Download datasheets and manufacturer documentation for MMBT2222ALT3G

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